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DIRD_10_Metallic_Spintronics.pdf
DIA·DIRDs_AAWSAP_AATIP·pdf·1.7 MB·27 pages
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/4\11"~1 l, ~ 1.:-.'·il ·· .;.· ·_.\: . • . ,, ! • -t. I : .•.. ,· - '\ .. --·· j . .} '.~3/ 23 March 2010 ICOD: 1 December 2009 DIA-08-1003-011 UNCLASSIFIED/fP8R err1e1Rt U9E OIILI Defense Intelligence Reference Document Acquisition Threat Support Metallic Spintronics UNCLASSIFIED/,«FOII: OPFilltftk Wil OPHa\t
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UNCLASSIFIED,l/FOR OFFICIO! 1155 At'! Y Metallic Spintronics Prepared by: (b)(3):10 USC 424 gency Author: Administrative Note COPYRIGHT WARNING: Further dissemlnatlon of the photographs in this publication is not authorized. This product is one in a series of advanced technology reports produced in FY 2009 under the Defense Intelligence Agency, J<b)(3):10 USC 424 I Advanced Aerospace Weapon System Applications (AAWSA)rogram. Comments or questions pertaining to this document should be addressed to b 3 :10 USC 424· b 6 AAWSA Program Manager, Defense Intelligence Agency, ATTN: b 3 :…
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UNCLASSIFIED /qtin@iteQiieinitoldiield ie hbies Contents 1. Introduction........ eusavesunnesses emennenenae eananenananenans nenanesans va haua sana cacanananenaucnnnasananananenenes iv 2. Giant Mag metoresiStance ......ccvecscsersscsuresuserecersperssevepenusceucerereraresresesusscevanssesesenes 1 2.1 GMR BASICS weccaseunenane eenan SARE RR EE BEE eee SURES Ee Ree @Gansnauara nanena PPE REE TSI TELCE CATE ETERS 1 Z.2 GMR Applications ......cccnccescscscscresuceseseeesscuseensnveccouseveneneresurssenesssuseveranccseuseete 3 3. Spin-Transfer-Torque oi cscccucsscesseceesseenecneanseaeee se eeee…
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UNCLASSIFIED//EOR AEEJCJOP !PSF ON!~ Metallic Spintronics 1. Introduction The rapid pace of progress in the computer industry over the past 40 years has been based on the miniaturization of chips and other computer components. Further miniaturization, however, faces serious challenges-for example, increasingly high power dlsslpation. To continue on pace, the industry must go beyond incremental improvements and embrace radically new technologies. A promising nanoscale technology known as spintronics (a neologism for "spin- based electronicsu) has emerged. Spintronics refers to the role…
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UNCLASSIFIED;/P8fl.. 8PPl81AL ltDI!! fJHLY Spintronics is a broad research field with ( currently) three major subfields: ( 1) materials research that is attempting to create new materials that are both magnetic and semiconductors, (2) research on novel magnetotransport effects in ferromagnetic metals, and (3) research on techniques that can be used to manipulate individual electron spins. The first subfield is targeting magnetic semiconductors because devices based on such materials would be the easiest to integrate with the present semiconductor device technology and processing capa…
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UNCLASSIFIED/JFOA OFF16l 1.k W&& &Hlk>S 2. Giant Magnetoresistance 2.1 GMR BASICS This section discusses the phenomenon of giant magnetoresistance (GMR). Excellent reviews of GMR are available elsewhere (Reference 12-22). The focus on physical concepts important for the sections to follow are discussed. GMR in magnetic multilayers refers to a dramatic reduction in the resistance of the multilayers when subjected to an external magnetic field. GMR's size is usually defined as the resistance change in magnetic field relative to its peak value. The effect can be distinguished from the or…
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UNCLASSIFIED//FOR: OFFIGl1\L t.Hil! 8HI:¥ studies (Reference 30} on sputtered cobalt-copper (Co/Cu) multilayers revealed magnetoresistances at room temperatures 3 to 4 times larger than those for iron- chromium and 13 times greater than those for the permalloy films that were used as magnetoresistive sensors in magnetic reading heads at that time. The much higher numbers observed in magnetic multilayers predetermined the fate of GMR in magnetic recording technology. The current understanding is that GMR observed in magnetic multilayers arises from the dependence of the resistivity on …
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UNCLASSIFIED//P81l 8PPM!I.AL ~81!! 8Hl!V
r)2/(R+r)2 5 1. The other definition l!R/R = (RAF-RF)/RF::;; (R-r)2/4Rr (unbounded from
above) is also in use. Figure 2a shows a magnetoresistance curve typical for magnetic
multilayers. The resistance is constant at a minimum value RF above a saturation field
Bs (parallel Fs) and rises to a maximum value RAF as the applied magnetic field B
approaches zero {antiparallel Fs).
GMR occurs in two different geometries (see Figure 1): namely when the current flows
in the plane of the layers, or CIP geometry, or when current flows perpendicular to the
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